Monthly Archives: January 2014

Model type: nmos or pmos These models are used in IC design. The set of instance parameters is the same as in level 1 MOSFETs. 3.6.23.1 BSIM3v2 (Level 47) MOSFET Model Syntax: M name (nodeDnodeGnodeSnodeB) model_name + param[=value]… BSIM3v2 models … Continue reading →

The level 6 model is a simplified MOSFET model developed at UC Berkeley. All level 1 model parameters are supported except kp, n, wd, xl, xw, delvto, bex, kf, and af. Some additional model parameters are also supported. See Table … Continue reading →

BSIM2 is an improved variant of the BSIM1 model [13]. It has the same set of instance parameters as the level 1 MOSFET model. All BSIM1 model parameters are supported except eta, leta, weta, x2e, lx2e, wx2e, x3e, lx3e, wx3e, … Continue reading →

BSIM is short for Berkeley short-channel IGFET (insulated gate FET) model. This is the beginning of a long line of BSIM models used mostly in IC design. The set of instance parameters is the same as in the level 1 … Continue reading →

This model is based on [12, 55]. The set of instance parameters is the same as in the level 2 MOSFET model. All level 2 model parameters except lambda, utra, uexp, ucrit, and neff are supported, and some additional parameters … Continue reading →

The level 2 MOSFET model is also known as the Grove–Frohman model [18]. The set of instance parameters is the same as in the level 1 model. All level 1 model parameters are supported along with some additional parameters. See … Continue reading →

3.6.21 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Model type: nmos or pmos Syntax: M name (nodeDnodeGnodeSnodeB) model_name + param[=value]… nmos sets the model to be an n-channel MOSFET model and pmos makes it a p-channel MOSFET model. When specifying … Continue reading →