The level 2 MOSFET model is also known as the Grove–Frohman model [18].
The set of instance parameters is the same as in the level 1 model. All level 1 model parameters are supported along with some additional parameters. See Tables 3.56 and 3.57.
Table 3.56
Additional MOSFET level 2 model parameters
Name

Unit

Default

Description


utra

–

0

Transverse field coefficient

delta

–

0

Width effect on threshold

uexp

–

0

Critical field exponent for surface mobility degradation

ucrit

V∕cm

10^{4}

Critical field for mobility degradation

vmax

m∕s

0

Maximum drift velocity of carriers

xj

m

0

Junction depth

neff

–

1

Total channel charge coefficient

nfs

1∕cm^{2}

0

Fast surface state density

The set of values calculated by the simulator is the same as in the level 1 model. Six additional quantities are calculated.
Table 3.57
Additional MOSFET level 2 properties calculated by the simulator
Name

Unit

Description


vth

V

Threshold voltage

vdsat

V

Saturation drain voltage

sourcevcrit

V

Critical source voltage

drainvcrit

V

Critical drain voltage

rs

Ω

Source resistance

rd

Ω

Drain resistance

The set of noise contributions and internal nodes is the same as in the level 1 model.
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