Level 2 MOSFET Model

The level 2 MOSFET model is also known as the Grove–Frohman model [18].
The set of instance parameters is the same as in the level 1 model. All level 1 model parameters are supported along with some additional parameters. See Tables 3.56 and 3.57.

Table 3.56

Additional MOSFET level 2 model parameters
Name
Unit
Default
Description
utra
0
Transverse field coefficient
delta
0
Width effect on threshold
uexp
0
Critical field exponent for surface mobility degradation
ucrit
V∕cm
104
Critical field for mobility degradation
vmax
m∕s
0
Maximum drift velocity of carriers
xj
m
0
Junction depth
neff
1
Total channel charge coefficient
nfs
1∕cm2
0
Fast surface state density
The set of values calculated by the simulator is the same as in the level 1 model. Six additional quantities are calculated.

Table 3.57

Additional MOSFET level 2 properties calculated by the simulator
Name
Unit
Description
vth
V
Threshold voltage
vdsat
V
Saturation drain voltage
sourcevcrit
V
Critical source voltage
drainvcrit
V
Critical drain voltage
rs
Ω
Source resistance
rd
Ω
Drain resistance
The set of noise contributions and internal nodes is the same as in the level 1 model.
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