This model is based on [12, 55]. The set of instance parameters is the same as in the level 2 MOSFET model. All level 2 model parameters except lambda, utra, uexp, ucrit, and neff are supported, and some additional parameters are available. See Table 3.58.
Table 3.58
Additional MOSFET level 3 model parameters
Name

Unit

Default

Description


eta

–

0

Static feedback factor for adjusting threshold

theta

1 ∕ V

0

Mobility degradation factor

kappa

1 ∕ V

0. 2

Saturation field factor

The set of values calculated by the simulator, noise contributions, and internal nodes are the same as in the level 2 model.
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