Level 4 MOSFET Model (BSIM1)

BSIM is short for Berkeley short-channel IGFET (insulated gate FET) model. This is the beginning of a long line of BSIM models used mostly in IC design.
The set of instance parameters is the same as in the level 1 model.
BSIM models are designed for use with a process characterization system. Therefore, model parameters have no default values. Omitting a parameter is considered to be an error. A more detailed description of the model parameters can be found in [44].
BSIM models have many parameters. See Table 3.59. These parameters are usually unimportant to an IC designer, as they are extracted at the foundry which supplies the models for the devices that are created by its manufacturing processes. IC designers focus mostly on choosing the device geometry and circuit layout.
BSIM1 instances have no instance properties calculated by the simulator. The set of internal nodes is the same as in level 1 MOSFETs. BSIM1 instances have no noise contributions.
Advertisements
This entry was posted in CMOS and tagged , . Bookmark the permalink.

Leave a Reply

Fill in your details below or click an icon to log in:

WordPress.com Logo

You are commenting using your WordPress.com account. Log Out / Change )

Twitter picture

You are commenting using your Twitter account. Log Out / Change )

Facebook photo

You are commenting using your Facebook account. Log Out / Change )

Google+ photo

You are commenting using your Google+ account. Log Out / Change )

Connecting to %s