BSIM2 is an improved variant of the BSIM1 model [13]. It has the same set of instance parameters as the level 1 MOSFET model.
All BSIM1 model parameters are supported except eta, leta, weta, x2e, lx2e, wx2e, x3e, lx3e, wx3e, muz, x2mz, lx2mz, wx2mz, mus, lmus, wmus, x2ms, lx2ms, wx2ms, x3ms, lx3ms, wx3ms, u0, lu0, wu0, x2u0, lx2u0, wx2u0, u1, lu1, wu1, x2u1, lx2u1, wx2u1, x3u1, lx3u1, and wx3u1. BSIM2 models also support some additional parameters. See Table 3.60.
Table 3.59
BSIM1 MOSFET (level 4) model parameters
Name

Unit

Description


vfb

V

Flatband voltage

lvfb

V ⋅μm

Length dependence of vfb

wvfb

V ⋅μm

Width dependence of vfb

phi

V

Strong inversion surface potential

lphi

V ⋅μm

Length dependence of phi

wphi

V ⋅μm

Width dependence of phi

k1

V^{1∕2}

Bulk effect coefficient 1

lk1

V^{1∕2} ⋅μm

Length dependence of k1

wk1

V^{1∕2} ⋅μm

Width dependence of k1

k2

–

Bulk effect coefficient 2

lk2

μm

Length dependence of k2

wk2

μm

Width dependence of k2

eta

–

V _{ ds } dependence of threshold voltage

leta

μm

Length dependence of eta

weta

μm

Width dependence of eta

x2e

1∕V

V _{ bs } dependence of eta

lx2e

μm∕V

Length dependence of x2e

wx2e

μm∕V

Width dependence of x2e

x3e

1∕V

V _{ ds } dependence of eta

lx3e

μm∕V

Length dependence of x3e

wx3e

μm∕V

Width dependence of x3e

dl

μm

Channel length reduction

dw

μm

Channel width reduction

muz

cm^{2}∕Vs

Zero field mobility at V _{ ds } = 0, V _{ gs } = V _{ th }

x2mz

cm^{2}∕V^{2}s

V _{ bs } dependence of muz

lx2mz

μm ⋅ cm^{2}∕V^{2}s

Length dependence of x2mz

wx2mz

μm ⋅ cm^{2}∕V^{2}s

Width dependence of x2mz

mus

cm^{2}∕Vs

Mobility at V _{ ds } = V _{ dd }, V _{ gs } = V _{ th }, channel length modulation

lmus

μm ⋅ cm^{2}∕Vs

Length dependence of mus

wmus

μm ⋅ cm^{2}∕Vs

Width dependence of mus

x2ms

cm^{2}∕V^{2}s

V _{ bs } dependence of mus

lx2ms

μm ⋅ cm^{2}∕V^{2}s

Length dependence of x2ms

wx2ms

μm ⋅ cm^{2}∕V^{2}s

Width dependence of x2ms

x3ms

cm^{2}∕V^{2}s

V _{ ds } dependence of mus

lx3ms

μm ⋅ cm^{2}∕V^{2}s

Length dependence of x3ms

wx3ms

μm ⋅ cm^{2}∕V^{2}s

Width dependence of x3ms

u0

1∕V

V _{ gs } dependence of mobility

lu0

μm∕V

Length dependence of u0

wu0

μm∕V

Width dependence of u0

x2u0

1∕V^{2}

V _{ bs } dependence of u0

lx2u0

μm∕V^{2}

Length dependence of x2u0

wx2u0

μm∕V^{2}

Width dependence of x2u0

u1

μm∕V

V _{ ds } dependence of mobility, velocity saturation

lu1

μm^{2}∕V

Length dependence of u1

wu1

μm^{2}∕V

Width dependence of u1

x2u1

μm∕V^{2}

V _{ bs } dependence of u1

lx2u1

μm^{2}∕V^{2}

Length dependence of x2u1

wx2u1

μm^{2}∕V^{2}

Width dependence of x2u1

x3u1

μm∕V^{2}

V _{ ds } dependence of u1

lx3u1

μm^{2}∕V^{2}

Length dependence of x3u1

wx3u1

μm^{2}∕V^{2}

Width dependence of x3u1

n0

–

Subthreshold slope

ln0

–

Length dependence of n0

wn0

–

Width dependence of n0

nb

–

V _{ bs } dependence of subthreshold slope

lnb

–

Length dependence of nb

wnb

–

Width dependence of nb

nd

–

V _{ ds } dependence of subthreshold slope

lnd

–

Length dependence of nd

wnd

–

Width dependence of nd

tox

μm

Gate oxide thickness

temp

^{ ∘ } C

Temperature at which parameters were measured

vdd

V

Supply voltage to specify mus

cgso

F∕m

G–S overlap capacitance per unit channel width

cgdo

F∕m

G–D overlap capacitance per unit channel width

cgbo

F∕m

G–B overlap capacitance per unit channel length

xpart

–

Flag for channel charge partitioning

rsh

Ω∕□

Source drain diffusion sheet resistance

js

A∕m^{2}

Source drain junction saturation current per unit area

pb

V

Source drain junction builtin potential

mj

–

Source drain bottom junction capacitance grading coefficient

pbsw

V

Source drain side junction capacitance builtin potential

mjsw

–

Source drain side junction capacitance grading coefficient

cj

F∕m^{2}

Source drain bottom junction capacitance per unit area

cjsw

F∕m

Source drain side junction capacitance per unit area

wdf

m

Default width of source drain diffusion

dell

m

Length reduction of source drain diffusion

Table 3.60
Additional BSIM2 MOSFET (level 5) model parameters
Name

Unit

Description


eta0

–

V _{ ds } dependence of threshold voltage at V _{ dd } = 0

leta0

μm

Length dependence of eta0

weta0

μm

Width dependence of eta0

etab

1∕V

V _{ bs } dependence of eta

letab

μm∕V

Length dependence of etab

wetab

μm∕V

Width dependence of etab

mu0

cm^{2}∕Vs

Lowfield mobility, at V _{ ds } = 0, V _{ gs } = V _{ th }

mu0b

cm^{2}∕V^{2}s

V _{ bs } dependence of lowfield mobility

lmu0b

μm ⋅ cm^{2}∕V^{2}s

Length dependence of mu0b

wmu0b

μm ⋅ cm^{2}∕V^{2}s

Width dependence of mu0b

mus0

cm^{2}∕Vs

Mobility at V _{ ds } = V _{ dd }, V _{ gs } = V _{ th }

lmus0

μm ⋅ cm^{2}∕Vs

Length dependence of mus0

wmus0

μm ⋅ cm^{2}∕Vs

Width dependence of mus0

musb

cm^{2}∕V^{2}s

V _{ bs } dependence of mus0

lmusb

μm ⋅ cm^{2}∕V^{2}s

Length dependence of musb

wmusb

μm ⋅ cm^{2}∕V^{2}s

Width dependence of musb

mu20

–

V _{ ds } dependence of mu in tanh term

lmu20

μm

Length dependence of mu20

wmu20

μm

Width dependence of mu20

mu2b

1∕V

V _{ bs } dependence of mu20

lmu2b

μm∕V

Length dependence of mu2b

wmu2b

μm∕V

Width dependence of mu2b

mu2g

1∕V

V _{ gs } dependence of mu20

lmu2g

μm∕V

Length dependence of mu2g

wmu2g

μm∕V

Width dependence of mu2g

mu30

cm^{2}∕V^{2}s

V _{ ds } dependence of mu in linear term

lmu30

μm ⋅ cm^{2}∕V^{2}s

Length dependence of mu30

wmu30

μm ⋅ cm^{2}∕V^{2}s

Width dependence of mu30

mu3b

cm^{2}∕V^{3}s

V _{ bs } dependence of mu3

lmu3b

μm ⋅ cm^{2}∕V^{3}s

Length dependence of mu3b

wmu3b

μm ⋅ cm^{2}∕V^{3}s

Width dependence of mu3b

mu3g

cm^{2}∕V^{3}s

V _{ gs } dependence of mu3

lmu3g

μm ⋅ cm^{2}∕V^{3}s

Length dependence of mu3g

wmu3g

μm ⋅ cm^{2}∕V^{3}s

Width dependence of mu3g

mu40

cm^{2}∕V^{3}s

V _{ ds } dependence of mu in linear term

lmu40

μm ⋅ cm^{2}∕V^{3}s

Length dependence of mu40

wmu40

μm ⋅ cm^{2}∕V^{3}s

Width dependence of mu40

mu4b

cm^{2}∕V^{4}s

V _{ bs } dependence of mu40

lmu4b

μm ⋅ cm^{2}∕V^{4}s

Length dependence of mu4b

wmu4b

μm ⋅ cm^{2}∕V^{4}s

Width dependence of mu4b

mu4g

cm^{2}∕V^{4}s

V _{ gs } dependence of mu40

lmu4g

μm ⋅ cm^{2}∕V^{4}s

Length dependence of mu4g

wmu4g

μm ⋅ cm^{2}∕V^{4}s

Width dependence of mu4g

ua0

1∕V

Linear V _{ gs } dependence of mobility

lua0

μm∕V

Length dependence of ua0

wua0

μm∕V

Width dependence of ua0

uab

1∕V^{2}

V _{ bs } dependence of ua0

luab

μm∕V^{2}

Length dependence of uab

wuab

μm∕V^{2}

Width dependence of uab

ub0

1∕V^{2}

Quadratic V _{ gs } dependence of mobility

lub0

μm∕V^{2}

Length dependence of ub0

wub0

μm∕V^{2}

Width dependence of ub0

ubb

1∕V^{3}

V _{ bs } dependence of ub0

lubb

μm∕V^{3}

Length dependence of ubb

wubb

μm∕V^{3}

Width dependence of ubb

u10

1∕V

V _{ ds } dependence of mobility

lu10

μm∕V

Length dependence of u10

wu10

μm∕V

Width dependence of u10

u1b

1∕V^{2}

V _{ bs } dependence of u10

lu1b

μm∕V^{2}

Length dependence of u1b

wu1b

μm∕V^{2}

Width dependence of u1b

u1d

1∕V^{2}

V _{ ds } dependence of u10

lu1d

μm∕V^{2}

Length dependence of u1d

wu1d

μm∕V^{2}

Width dependence of u1d

vof0

–

Threshold voltage offset at V _{ ds } = 0, V _{ bs } = 0

lvof0

μm

Length dependence of vof0

wvof0

μm

Width dependence of vof0

vofb

1∕V

V _{ bs } dependence of vof0

lvofb

μm∕V

Length dependence of vofb

wvofb

μm∕V

Width dependence of vofb

vofd

1∕V

V _{ ds } dependence of vof0

lvofd

μm∕V

Length dependence of vofd

wvofd

μm∕V

Width dependence of vofd

ai0

–

Impact ionization coefficient

lai0

μm

Length dependence of ai0

wai0

μm

Width dependence of ai0

aib

1∕V

V _{ bs } dependence of ai0

laib

μm∕V

Length dependence of aib

waib

μm∕V

Width dependence of aib

bi0

V

Impact ionization exponent

lbi0

μm ⋅ V

Length dependence of bi0

wbi0

μm ⋅ V

Width dependence of bi0

bib

–

V _{ bs } dependence of bi0

lbib

μm

Length dependence of bib

wbib

μm

Width dependence of bib

vghigh

V

Upper bound of the weakstrong inversion transition region

lvghigh

μm ⋅ V

Length dependence of vghigh

wvghigh

μm ⋅ V

Width dependence of vghigh

vglow

V

Lower bound of the weakstrong inversion transition region

lvglow

μm ⋅ V

Length dependence of vglow

wvglow

μm ⋅ V

Width dependence of vglow

vgg

V

Maximum V _{ gs }

vbb

V

Maximum V _{ bs }

BSIM2 instances have no instance properties calculated by the simulator. The set of internal nodes is the same as in level 1 MOSFETs. BSIM2 instances have no noise contributions.
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