Level 5 MOSFET Model

BSIM2 is an improved variant of the BSIM1 model [13]. It has the same set of instance parameters as the level 1 MOSFET model.
All BSIM1 model parameters are supported except eta, leta, weta, x2e, lx2e, wx2e, x3e, lx3e, wx3e, muz, x2mz, lx2mz, wx2mz, mus, lmus, wmus, x2ms, lx2ms, wx2ms, x3ms, lx3ms, wx3ms, u0, lu0, wu0, x2u0, lx2u0, wx2u0, u1, lu1, wu1, x2u1, lx2u1, wx2u1, x3u1, lx3u1, and wx3u1. BSIM2 models also support some additional parameters. See Table 3.60.
Table 3.59

BSIM1 MOSFET (level 4) model parameters
Name
Unit
Description
vfb
V
Flatband voltage
lvfb
V ⋅μm
Length dependence of vfb
wvfb
V ⋅μm
Width dependence of vfb
phi
V
Strong inversion surface potential
lphi
V ⋅μm
Length dependence of phi
wphi
V ⋅μm
Width dependence of phi
k1
V1∕2
Bulk effect coefficient 1
lk1
V1∕2 ⋅μm
Length dependence of k1
wk1
V1∕2 ⋅μm
Width dependence of k1
k2
Bulk effect coefficient 2
lk2
μm
Length dependence of k2
wk2
μm
Width dependence of k2
eta
V ds dependence of threshold voltage
leta
μm
Length dependence of eta
weta
μm
Width dependence of eta
x2e
1∕V
V bs dependence of eta
lx2e
μm∕V
Length dependence of x2e
wx2e
μm∕V
Width dependence of x2e
x3e
1∕V
V ds dependence of eta
lx3e
μm∕V
Length dependence of x3e
wx3e
μm∕V
Width dependence of x3e
dl
μm
Channel length reduction
dw
μm
Channel width reduction
muz
cm2∕Vs
Zero field mobility at V ds = 0, V gs = V th
x2mz
cm2∕V2s
V bs dependence of muz
lx2mz
μm ⋅ cm2∕V2s
Length dependence of x2mz
wx2mz
μm ⋅ cm2∕V2s
Width dependence of x2mz
mus
cm2∕Vs
Mobility at V ds = V dd , V gs = V th , channel length modulation
lmus
μm ⋅ cm2∕Vs
Length dependence of mus
wmus
μm ⋅ cm2∕Vs
Width dependence of mus
x2ms
cm2∕V2s
V bs dependence of mus
lx2ms
μm ⋅ cm2∕V2s
Length dependence of x2ms
wx2ms
μm ⋅ cm2∕V2s
Width dependence of x2ms
x3ms
cm2∕V2s
V ds dependence of mus
lx3ms
μm ⋅ cm2∕V2s
Length dependence of x3ms
wx3ms
μm ⋅ cm2∕V2s
Width dependence of x3ms
u0
1∕V
V gs dependence of mobility
lu0
μm∕V
Length dependence of u0
wu0
μm∕V
Width dependence of u0
x2u0
1∕V2
V bs dependence of u0
lx2u0
μm∕V2
Length dependence of x2u0
wx2u0
μm∕V2
Width dependence of x2u0
u1
μm∕V
V ds dependence of mobility, velocity saturation
lu1
μm2∕V
Length dependence of u1
wu1
μm2∕V
Width dependence of u1
x2u1
μm∕V2
V bs dependence of u1
lx2u1
μm2∕V2
Length dependence of x2u1
wx2u1
μm2∕V2
Width dependence of x2u1
x3u1
μm∕V2
V ds dependence of u1
lx3u1
μm2∕V2
Length dependence of x3u1
wx3u1
μm2∕V2
Width dependence of x3u1
n0
Subthreshold slope
ln0
Length dependence of n0
wn0
Width dependence of n0
nb
V bs dependence of subthreshold slope
lnb
Length dependence of nb
wnb
Width dependence of nb
nd
V ds dependence of subthreshold slope
lnd
Length dependence of nd
wnd
Width dependence of nd
tox
μm
Gate oxide thickness
temp
C
Temperature at which parameters were measured
vdd
V
Supply voltage to specify mus
cgso
F∕m
G–S overlap capacitance per unit channel width
cgdo
F∕m
G–D overlap capacitance per unit channel width
cgbo
F∕m
G–B overlap capacitance per unit channel length
xpart
Flag for channel charge partitioning
rsh
Ω∕□
Source drain diffusion sheet resistance
js
A∕m2
Source drain junction saturation current per unit area
pb
V
Source drain junction built-in potential
mj
Source drain bottom junction capacitance grading coefficient
pbsw
V
Source drain side junction capacitance built-in potential
mjsw
Source drain side junction capacitance grading coefficient
cj
F∕m2
Source drain bottom junction capacitance per unit area
cjsw
F∕m
Source drain side junction capacitance per unit area
wdf
m
Default width of source drain diffusion
dell
m
Length reduction of source drain diffusion
Table 3.60

Additional BSIM2 MOSFET (level 5) model parameters
Name
Unit
Description
eta0
V ds dependence of threshold voltage at V dd = 0
leta0
μm
Length dependence of eta0
weta0
μm
Width dependence of eta0
etab
1∕V
V bs dependence of eta
letab
μm∕V
Length dependence of etab
wetab
μm∕V
Width dependence of etab
mu0
cm2∕Vs
Low-field mobility, at V ds = 0, V gs = V th
mu0b
cm2∕V2s
V bs dependence of low-field mobility
lmu0b
μm ⋅ cm2∕V2s
Length dependence of mu0b
wmu0b
μm ⋅ cm2∕V2s
Width dependence of mu0b
mus0
cm2∕Vs
Mobility at V ds = V dd , V gs = V th
lmus0
μm ⋅ cm2∕Vs
Length dependence of mus0
wmus0
μm ⋅ cm2∕Vs
Width dependence of mus0
musb
cm2∕V2s
V bs dependence of mus0
lmusb
μm ⋅ cm2∕V2s
Length dependence of musb
wmusb
μm ⋅ cm2∕V2s
Width dependence of musb
mu20
V ds dependence of mu in tanh term
lmu20
μm
Length dependence of mu20
wmu20
μm
Width dependence of mu20
mu2b
1∕V
V bs dependence of mu20
lmu2b
μm∕V
Length dependence of mu2b
wmu2b
μm∕V
Width dependence of mu2b
mu2g
1∕V
V gs dependence of mu20
lmu2g
μm∕V
Length dependence of mu2g
wmu2g
μm∕V
Width dependence of mu2g
mu30
cm2∕V2s
V ds dependence of mu in linear term
lmu30
μm ⋅ cm2∕V2s
Length dependence of mu30
wmu30
μm ⋅ cm2∕V2s
Width dependence of mu30
mu3b
cm2∕V3s
V bs dependence of mu3
lmu3b
μm ⋅ cm2∕V3s
Length dependence of mu3b
wmu3b
μm ⋅ cm2∕V3s
Width dependence of mu3b
mu3g
cm2∕V3s
V gs dependence of mu3
lmu3g
μm ⋅ cm2∕V3s
Length dependence of mu3g
wmu3g
μm ⋅ cm2∕V3s
Width dependence of mu3g
mu40
cm2∕V3s
V ds dependence of mu in linear term
lmu40
μm ⋅ cm2∕V3s
Length dependence of mu40
wmu40
μm ⋅ cm2∕V3s
Width dependence of mu40
mu4b
cm2∕V4s
V bs dependence of mu40
lmu4b
μm ⋅ cm2∕V4s
Length dependence of mu4b
wmu4b
μm ⋅ cm2∕V4s
Width dependence of mu4b
mu4g
cm2∕V4s
V gs dependence of mu40
lmu4g
μm ⋅ cm2∕V4s
Length dependence of mu4g
wmu4g
μm ⋅ cm2∕V4s
Width dependence of mu4g
ua0
1∕V
Linear V gs dependence of mobility
lua0
μm∕V
Length dependence of ua0
wua0
μm∕V
Width dependence of ua0
uab
1∕V2
V bs dependence of ua0
luab
μm∕V2
Length dependence of uab
wuab
μm∕V2
Width dependence of uab
ub0
1∕V2
Quadratic V gs dependence of mobility
lub0
μm∕V2
Length dependence of ub0
wub0
μm∕V2
Width dependence of ub0
ubb
1∕V3
V bs dependence of ub0
lubb
μm∕V3
Length dependence of ubb
wubb
μm∕V3
Width dependence of ubb
u10
1∕V
V ds dependence of mobility
lu10
μm∕V
Length dependence of u10
wu10
μm∕V
Width dependence of u10
u1b
1∕V2
V bs dependence of u10
lu1b
μm∕V2
Length dependence of u1b
wu1b
μm∕V2
Width dependence of u1b
u1d
1∕V2
V ds dependence of u10
lu1d
μm∕V2
Length dependence of u1d
wu1d
μm∕V2
Width dependence of u1d
vof0
Threshold voltage offset at V ds = 0, V bs = 0
lvof0
μm
Length dependence of vof0
wvof0
μm
Width dependence of vof0
vofb
1∕V
V bs dependence of vof0
lvofb
μm∕V
Length dependence of vofb
wvofb
μm∕V
Width dependence of vofb
vofd
1∕V
V ds dependence of vof0
lvofd
μm∕V
Length dependence of vofd
wvofd
μm∕V
Width dependence of vofd
ai0
Impact ionization coefficient
lai0
μm
Length dependence of ai0
wai0
μm
Width dependence of ai0
aib
1∕V
V bs dependence of ai0
laib
μm∕V
Length dependence of aib
waib
μm∕V
Width dependence of aib
bi0
V
Impact ionization exponent
lbi0
μm ⋅ V
Length dependence of bi0
wbi0
μm ⋅ V
Width dependence of bi0
bib
V bs dependence of bi0
lbib
μm
Length dependence of bib
wbib
μm
Width dependence of bib
vghigh
V
Upper bound of the weak-strong inversion transition region
lvghigh
μm ⋅ V
Length dependence of vghigh
wvghigh
μm ⋅ V
Width dependence of vghigh
vglow
V
Lower bound of the weak-strong inversion transition region
lvglow
μm ⋅ V
Length dependence of vglow
wvglow
μm ⋅ V
Width dependence of vglow
vgg
V
Maximum V gs
vbb
V
Maximum V bs
BSIM2 instances have no instance properties calculated by the simulator. The set of internal nodes is the same as in level 1 MOSFETs. BSIM2 instances have no noise contributions.
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