The level 6 model is a simplified MOSFET model developed at UC Berkeley. All level 1 model parameters are supported except kp, n, wd, xl, xw, delvto, bex, kf, and af. Some additional model parameters are also supported. See Table 3.61.
Table 3.61
Additional MOSFET level 6 model parameters
Name

Unit

Default

Description


kv

V

2

Saturation voltage factor

nv

–

0. 5

Saturation voltage coefficient

kc

A

5 ⋅10^{ − 5}

Saturation current factor

nc

–

1

Saturation current coefficient

nvth

–

0. 5

Threshold voltage coefficient

ps

–

0

Saturation current modification parameter

gamma1

–

0

Bulk threshold parameter 1

sigma

–

0

Static feedback effect parameter

lambda0

1 ∕ V

lambda

Channel length modulation parameter 0

lambda1

1 ∕ V^{2}

0

Channel length modulation parameter 1

The set of values calculated by the simulator and the set of internal nodes are the same as those in the level 2 model. Level 6 MOSFETs have no noise model and therefore no noise contributions.
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