Level 6 MOSFET Model

The level 6 model is a simplified MOSFET model developed at UC Berkeley. All level 1 model parameters are supported except kp, n, wd, xl, xw, delvto, bex, kf, and af. Some additional model parameters are also supported. See Table 3.61.
Table 3.61

Additional MOSFET level 6 model parameters
Name
Unit
Default
Description
kv
V
2
Saturation voltage factor
nv
0. 5
Saturation voltage coefficient
kc
A
5 ⋅10 − 5
Saturation current factor
nc
1
Saturation current coefficient
nvth
0. 5
Threshold voltage coefficient
ps
0
Saturation current modification parameter
gamma1
0
Bulk threshold parameter 1
sigma
0
Static feedback effect parameter
lambda0
1 ∕ V
lambda
Channel length modulation parameter 0
lambda1
1 ∕ V2
0
Channel length modulation parameter 1
The set of values calculated by the simulator and the set of internal nodes are the same as those in the level 2 model. Level 6 MOSFETs have no noise model and therefore no noise contributions.
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