Name

Unit

Description


vfb

V

Flatband voltage

lvfb

V ⋅μm

Length dependence of vfb

wvfb

V ⋅μm

Width dependence of vfb

phi

V

Strong inversion surface potential

lphi

V ⋅μm

Length dependence of phi

wphi

V ⋅μm

Width dependence of phi

k1

V^{1∕2}

Bulk effect coefficient 1

lk1

V^{1∕2} ⋅μm

Length dependence of k1

wk1

V^{1∕2} ⋅μm

Width dependence of k1

k2

–

Bulk effect coefficient 2

lk2

μm

Length dependence of k2

wk2

μm

Width dependence of k2

eta

–

V _{ ds } dependence of threshold voltage

leta

μm

Length dependence of eta

weta

μm

Width dependence of eta

x2e

1∕V

V _{ bs } dependence of eta

lx2e

μm∕V

Length dependence of x2e

wx2e

μm∕V

Width dependence of x2e

x3e

1∕V

V _{ ds } dependence of eta

lx3e

μm∕V

Length dependence of x3e

wx3e

μm∕V

Width dependence of x3e

dl

μm

Channel length reduction

dw

μm

Channel width reduction

muz

cm^{2}∕Vs

Zero field mobility at V _{ ds } = 0, V _{ gs } = V _{ th }

x2mz

cm^{2}∕V^{2}s

V _{ bs } dependence of muz

lx2mz

μm ⋅ cm^{2}∕V^{2}s

Length dependence of x2mz

wx2mz

μm ⋅ cm^{2}∕V^{2}s

Width dependence of x2mz

mus

cm^{2}∕Vs

Mobility at V _{ ds } = V _{ dd }, V _{ gs } = V _{ th }, channel length modulation

lmus

μm ⋅ cm^{2}∕Vs

Length dependence of mus

wmus

μm ⋅ cm^{2}∕Vs

Width dependence of mus

x2ms

cm^{2}∕V^{2}s

V _{ bs } dependence of mus

lx2ms

μm ⋅ cm^{2}∕V^{2}s

Length dependence of x2ms

wx2ms

μm ⋅ cm^{2}∕V^{2}s

Width dependence of x2ms

x3ms

cm^{2}∕V^{2}s

V _{ ds } dependence of mus

lx3ms

μm ⋅ cm^{2}∕V^{2}s

Length dependence of x3ms

wx3ms

μm ⋅ cm^{2}∕V^{2}s

Width dependence of x3ms

u0

1∕V

V _{ gs } dependence of mobility

lu0

μm∕V

Length dependence of u0

wu0

μm∕V

Width dependence of u0

x2u0

1∕V^{2}

V _{ bs } dependence of u0

lx2u0

μm∕V^{2}

Length dependence of x2u0

wx2u0

μm∕V^{2}

Width dependence of x2u0

u1

μm∕V

V _{ ds } dependence of mobility, velocity saturation

lu1

μm^{2}∕V

Length dependence of u1

wu1

μm^{2}∕V

Width dependence of u1

x2u1

μm∕V^{2}

V _{ bs } dependence of u1

lx2u1

μm^{2}∕V^{2}

Length dependence of x2u1

wx2u1

μm^{2}∕V^{2}

Width dependence of x2u1

x3u1

μm∕V^{2}

V _{ ds } dependence of u1

lx3u1

μm^{2}∕V^{2}

Length dependence of x3u1

wx3u1

μm^{2}∕V^{2}

Width dependence of x3u1

n0

–

Subthreshold slope

ln0

–

Length dependence of n0

wn0

–

Width dependence of n0

nb

–

V _{ bs } dependence of subthreshold slope

lnb

–

Length dependence of nb

wnb

–

Width dependence of nb

nd

–

V _{ ds } dependence of subthreshold slope

lnd

–

Length dependence of nd

wnd

–

Width dependence of nd

tox

μm

Gate oxide thickness

temp

^{ ∘ } C

Temperature at which parameters were measured

vdd

V

Supply voltage to specify mus

cgso

F∕m

G–S overlap capacitance per unit channel width

cgdo

F∕m

G–D overlap capacitance per unit channel width

cgbo

F∕m

G–B overlap capacitance per unit channel length

xpart

–

Flag for channel charge partitioning

rsh

Ω∕□

Source drain diffusion sheet resistance

js

A∕m^{2}

Source drain junction saturation current per unit area

pb

V

Source drain junction builtin potential

mj

–

Source drain bottom junction capacitance grading coefficient

pbsw

V

Source drain side junction capacitance builtin potential

mjsw

–

Source drain side junction capacitance grading coefficient

cj

F∕m^{2}

Source drain bottom junction capacitance per unit area

cjsw

F∕m

Source drain side junction capacitance per unit area

wdf

m

Default width of source drain diffusion

dell

m

Length reduction of source drain diffusion

Name

Unit

Description


eta0

–

V _{ ds } dependence of threshold voltage at V _{ dd } = 0

leta0

μm

Length dependence of eta0

weta0

μm

Width dependence of eta0

etab

1∕V

V _{ bs } dependence of eta

letab

μm∕V

Length dependence of etab

wetab

μm∕V

Width dependence of etab

mu0

cm^{2}∕Vs

Lowfield mobility, at V _{ ds } = 0, V _{ gs } = V _{ th }

mu0b

cm^{2}∕V^{2}s

V _{ bs } dependence of lowfield mobility

lmu0b

μm ⋅ cm^{2}∕V^{2}s

Length dependence of mu0b

wmu0b

μm ⋅ cm^{2}∕V^{2}s

Width dependence of mu0b

mus0

cm^{2}∕Vs

Mobility at V _{ ds } = V _{ dd }, V _{ gs } = V _{ th }

lmus0

μm ⋅ cm^{2}∕Vs

Length dependence of mus0

wmus0

μm ⋅ cm^{2}∕Vs

Width dependence of mus0

musb

cm^{2}∕V^{2}s

V _{ bs } dependence of mus0

lmusb

μm ⋅ cm^{2}∕V^{2}s

Length dependence of musb

wmusb

μm ⋅ cm^{2}∕V^{2}s

Width dependence of musb

mu20

–

V _{ ds } dependence of mu in tanh term

lmu20

μm

Length dependence of mu20

wmu20

μm

Width dependence of mu20

mu2b

1∕V

V _{ bs } dependence of mu20

lmu2b

μm∕V

Length dependence of mu2b

wmu2b

μm∕V

Width dependence of mu2b

mu2g

1∕V

V _{ gs } dependence of mu20

lmu2g

μm∕V

Length dependence of mu2g

wmu2g

μm∕V

Width dependence of mu2g

mu30

cm^{2}∕V^{2}s

V _{ ds } dependence of mu in linear term

lmu30

μm ⋅ cm^{2}∕V^{2}s

Length dependence of mu30

wmu30

μm ⋅ cm^{2}∕V^{2}s

Width dependence of mu30

mu3b

cm^{2}∕V^{3}s

V _{ bs } dependence of mu3

lmu3b

μm ⋅ cm^{2}∕V^{3}s

Length dependence of mu3b

wmu3b

μm ⋅ cm^{2}∕V^{3}s

Width dependence of mu3b

mu3g

cm^{2}∕V^{3}s

V _{ gs } dependence of mu3

lmu3g

μm ⋅ cm^{2}∕V^{3}s

Length dependence of mu3g

wmu3g

μm ⋅ cm^{2}∕V^{3}s

Width dependence of mu3g

mu40

cm^{2}∕V^{3}s

V _{ ds } dependence of mu in linear term

lmu40

μm ⋅ cm^{2}∕V^{3}s

Length dependence of mu40

wmu40

μm ⋅ cm^{2}∕V^{3}s

Width dependence of mu40

mu4b

cm^{2}∕V^{4}s

V _{ bs } dependence of mu40

lmu4b

μm ⋅ cm^{2}∕V^{4}s

Length dependence of mu4b

wmu4b

μm ⋅ cm^{2}∕V^{4}s

Width dependence of mu4b

mu4g

cm^{2}∕V^{4}s

V _{ gs } dependence of mu40

lmu4g

μm ⋅ cm^{2}∕V^{4}s

Length dependence of mu4g

wmu4g

μm ⋅ cm^{2}∕V^{4}s

Width dependence of mu4g

ua0

1∕V

Linear V _{ gs } dependence of mobility

lua0

μm∕V

Length dependence of ua0

wua0

μm∕V

Width dependence of ua0

uab

1∕V^{2}

V _{ bs } dependence of ua0

luab

μm∕V^{2}

Length dependence of uab

wuab

μm∕V^{2}

Width dependence of uab

ub0

1∕V^{2}

Quadratic V _{ gs } dependence of mobility

lub0

μm∕V^{2}

Length dependence of ub0

wub0

μm∕V^{2}

Width dependence of ub0

ubb

1∕V^{3}

V _{ bs } dependence of ub0

lubb

μm∕V^{3}

Length dependence of ubb

wubb

μm∕V^{3}

Width dependence of ubb

u10

1∕V

V _{ ds } dependence of mobility

lu10

μm∕V

Length dependence of u10

wu10

μm∕V

Width dependence of u10

u1b

1∕V^{2}

V _{ bs } dependence of u10

lu1b

μm∕V^{2}

Length dependence of u1b

wu1b

μm∕V^{2}

Width dependence of u1b

u1d

1∕V^{2}

V _{ ds } dependence of u10

lu1d

μm∕V^{2}

Length dependence of u1d

wu1d

μm∕V^{2}

Width dependence of u1d

vof0

–

Threshold voltage offset at V _{ ds } = 0, V _{ bs } = 0

lvof0

μm

Length dependence of vof0

wvof0

μm

Width dependence of vof0

vofb

1∕V

V _{ bs } dependence of vof0

lvofb

μm∕V

Length dependence of vofb

wvofb

μm∕V

Width dependence of vofb

vofd

1∕V

V _{ ds } dependence of vof0

lvofd

μm∕V

Length dependence of vofd

wvofd

μm∕V

Width dependence of vofd

ai0

–

Impact ionization coefficient

lai0

μm

Length dependence of ai0

wai0

μm

Width dependence of ai0

aib

1∕V

V _{ bs } dependence of ai0

laib

μm∕V

Length dependence of aib

waib

μm∕V

Width dependence of aib

bi0

V

Impact ionization exponent

lbi0

μm ⋅ V

Length dependence of bi0

wbi0

μm ⋅ V

Width dependence of bi0

bib

–

V _{ bs } dependence of bi0

lbib

μm

Length dependence of bib

wbib

μm

Width dependence of bib

vghigh

V

Upper bound of the weakstrong inversion transition region

lvghigh

μm ⋅ V

Length dependence of vghigh

wvghigh

μm ⋅ V

Width dependence of vghigh

vglow

V

Lower bound of the weakstrong inversion transition region

lvglow

μm ⋅ V

Length dependence of vglow

wvglow

μm ⋅ V

Width dependence of vglow

vgg

V

Maximum V _{ gs }

vbb

V

Maximum V _{ bs }
